Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 5:00 PM - 5:50 PM P06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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5:00 PM - 5:50 PM

[19p-P06-1] Cathode-electrode on photoelectrochemical (PEC) etching for n-GaN on n+GaN substrate

NOBORU FUKUHARA¹, 〇FUMIMASA HORIKIRI¹, MASACHIKA TOGUCHI², KAZUKI MIWA², HIROKI OGAMI², TAKETOMO SATO² (1.SCIOCS, 2.Hokkaido Univ.)

5:00 PM - 5:50 PM

[19p-P06-2] Effects of forming gas annealing on electrical properties of Pt/ALD-Al₂O₃/AlGaN/GaN MIS-HEMTsⅢ

〇Toshiharu Kubo¹, Nobuki Yoshida¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

5:00 PM - 5:50 PM

[19p-P06-3] Effect of forward bias application on 0.88 eV hole trap in hydrogen-implanted n⁺p GaN

〇Yutaka Tokuda¹, Hikaru Yoshida¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. Technol., 2.Nagoya University, 3.SHI-ATEX Co., Ltd)

5:00 PM - 5:50 PM

[19p-P06-4] Generation of hole trap in p-GaN layer by forward current injection

〇Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

5:00 PM - 5:50 PM

[19p-P06-5] Effect of Oxygen on Thermionic Emission Characteristics from High Al Composition AlGaN Thin Film

〇Takuya Fujimoto¹, Shigeya Kimura², Hisashi Yoshida², Hisao Miyazaki², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Toshiba Corp.)

5:00 PM - 5:50 PM

[19p-P06-6] Simulation Study on a GaN-npn HBT with a AlGaInN Emitter Layer and a Quantum Well Base layer

〇Yutaka Nikai¹, Yusuke Iida¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.NITech)

5:00 PM - 5:50 PM

[19p-P06-7] RonA reduction of 600V vertical GaN-DMOSFET for high speed switching

〇Takuro Inamoto¹, Yuta Fukushima¹, Ryo Tanaka¹, Katsunori Ueno¹, Shinya Takashima¹, Masaharu Edo¹ (1.Fuji Electric)

5:00 PM - 5:50 PM

▲ [19p-P06-8] Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer

〇(P)Maria Villamin¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

5:00 PM - 5:50 PM

[19p-P06-9] Investigation of monolithic integrated circuit using based-on AlGaN/GaN heterostructure

〇Tomoaki Kawauchi¹, Mao Fukinaka¹, Tomoaki Mashimo¹, Hiroshi Okada¹ (1.Toyohashi Univ. Tech)

Session information

[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

[19p-P06-1] Cathode-electrode on photoelectrochemical (PEC) etching for n-GaN on n+GaN substrate

[19p-P06-2] Effects of forming gas annealing on electrical properties of Pt/ALD-Al₂O₃/AlGaN/GaN MIS-HEMTsⅢ

[19p-P06-3] Effect of forward bias application on 0.88 eV hole trap in hydrogen-implanted n⁺p GaN

[19p-P06-4] Generation of hole trap in p-GaN layer by forward current injection

[19p-P06-5] Effect of Oxygen on Thermionic Emission Characteristics from High Al Composition AlGaN Thin Film

[19p-P06-6] Simulation Study on a GaN-npn HBT with a AlGaInN Emitter Layer and a Quantum Well Base layer

[19p-P06-7] RonA reduction of 600V vertical GaN-DMOSFET for high speed switching

▲ [19p-P06-8] Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer

[19p-P06-9] Investigation of monolithic integrated circuit using based-on AlGaN/GaN heterostructure

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