Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-Z27-1~14] 15.4 III-V-group nitride crystals

Fri. Mar 19, 2021 1:00 PM - 5:00 PM Z27 (Z27)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo), Kenjiro Uesugi(Mie Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[19p-Z27-1] Fabrication of GaN-QPM crystals for slab waveguide type wavelength conversion devices

〇Hiroki Ishihara¹, Kazuhiro Kurose¹, Yoshimasa Kawata^1,2, Atushi Sugita¹, Yoku Inoue¹, Takayuki Nakano^1,2 (1.Shizuoka Univ., 2.R.I.E. Shizuoka Univ.)

1:15 PM - 1:30 PM

[19p-Z27-2] Growth and evaluation of high-quality N-polar AlN on sapphire substrate

〇Wataru Matsumura², Ryota Sakamoto¹, Tadatosi Ito¹, Takahiro Saito¹, Kazuya Ataka¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Yamaguchi Univ.)

1:30 PM - 1:45 PM

△ [19p-Z27-3] Crystal growth of high temperature AlN on AlN template

〇(M1)Shota Tsuda², Reiya Aono², Yuya Ageta², Takumi Miyagawa², Hideki Hirayama^1,3, Yusuke Takashima², Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ.pLED, 2.Faculty of Science and Engineering,Tokushima Univ., 3.RIKEN)

1:45 PM - 2:00 PM

[19p-Z27-4] Self-organized growth of NbN nanostructures on atomically flat AlN

〇Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.The Univ. of Tokyo)

2:00 PM - 2:15 PM

[19p-Z27-5] Crystal Orientation Analysis of NbN grown on AlN surfaces

〇Shunya Kihira¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.Univ. of Tokyo)

2:30 PM - 2:45 PM

[19p-Z27-6] Origin of AlGaN Anomalous Growth on High-Temperature Annealed AlN Template

〇Kenjiro Uesugi¹, Yuta Tezen¹, Shiyu Xiao², Kenji Norimatsu¹, Mina Okamura¹, Tsutomu Araki³, Hideto Miyake^2,4 (1.SPORR, Mie Univ., 2.Grad. Sch. of RIS, Mie Univ., 3.Ritsumeikan Univ., 4.Grad. Sch. of Eng., Mie Univ.)

2:45 PM - 3:00 PM

[19p-Z27-7] MOVPE Growth of AlGaN Channel HEMTs on Annealed Sputtered AlN Templates

〇(M1)Ryuichi Mori¹, Kenjiro Uesugi², Tatsuya Shirato¹, Shigeyuki Kuboya², Kanako Shojiki¹, Hideto Miyake^1,3 (1.Grad. Sch. of Eng., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of RIS., Mie Univ.)

3:00 PM - 3:15 PM

△ [19p-Z27-8] Growth of tunnel junction on m-plane GaN substrate for its introduction to multi-quantum shell devices

〇Shiori Yamamura¹, Yoshiya Miyamoto¹, Naoki Sone^1,3, Weifang Lu¹, Renji Okuda¹, Kazuma Ito¹, Yukimi Jinno¹, Nanami Nakayama¹, Sae Katsuro¹, Koji Okuno^4,1, Koichi Mizutani⁴, Kazuyoshi Iida^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing CO., 4.TOYODA GOSEI CO.,Ltd)

3:15 PM - 3:30 PM

[19p-Z27-9] Characterizations of impurity doping in GaN crystal for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

〇Naoki Sone^1,3, Yoshiya Miyamoto³, Kazuma Ito³, Shiori Yamamura³, Yukimi Jinno³, Sae Katsuro³, Nanami Nakayama³, Koji Okuno^2,3, Koichi Mizutani², Kazuyoshi Iida^2,3, Weifang Lu³, satoshi Kamiyama³, Tetsuya Takeuchi³, Motoaki Iwaya³, Isamu Akasaki^3,4 (1.KOITO MANUGACTRING Co., Ltd, 2.TOYODA GOSEI Co., Ltd, 3.Meijo university, 4.Nagoya university)

3:30 PM - 3:45 PM

△ [19p-Z27-10] Study on polarization-induced hole conduction for epitaxial AlInN films

〇Taiki Nakabayashi¹, Haruka Takada¹, Takashi Egawa¹, Makoto Miyoshi¹, Tetsuya Takeuchi² (1.Nagoya Inst. Tech., 2.Meijo Univ.)

4:00 PM - 4:15 PM

[19p-Z27-11] Analysis of Step-velocity Dependences of C Concentration in GaN Grown on m-faces

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

4:15 PM - 4:30 PM

[19p-Z27-12] Comparative Analysis of Decomposition of TMGa and TEGa for the Clarification of
the Mechanism of Unintentional Carbon Incorporation in GaN MOVPE Growth

〇Zheng Ye¹, Shugo Nitta¹, Hirotaka Watanabe¹, Yoshio Honda^1,2, Markus Pristovsek¹, Hiroshi Amano^1,3,4,5 (1.IMaSS, Nagoya Univ., 2.IAR, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ., 5.NIMS)

4:30 PM - 4:45 PM

△ [19p-Z27-13] Growth mechanism in high flow velocity growth of AlN

〇(B)Takumi Miyagawa¹, Shota Tuda¹, Reiya Aono¹, Yuya Ageta¹, Hideki Hirayama^2,3, Yusuke Takashima¹, Yosiki Naoi^1,2, Kentaro Nagamatu^1,2 (1.Tokushima Univ., 2.Tokushima Univ. pLED, 3.RIKEN)

4:45 PM - 5:00 PM

[19p-Z27-14] Reduction of parasitic reaction during the AlN growth by HT-MOVPE

〇Kentaro Nagamatsu^1,2, Shota Tsuda², Reiya Aono², Manabu Miyagawa², Yuuya Ageta², Hideki Hirayama^1,3, Yuusuke Takashima², Yoshiki Naoi^1,2 (1.Tokushima Univ. pLED, 2.Faculty of Science and Engineering, Tokushima Univ., 3.RIKEN)

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