Kazuhiro Mochizuki

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 1:00 PM - 5:00 PM Z27 (Z27)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19p-Z27-1~14] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM

[19p-Z27-11] Analysis of Step-velocity Dependences of C Concentration in GaN Grown on m-faces

〇Kazuhiro Mochizuki¹, Fumimasa Horikiri², Hiroshi Ohta¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Wed. Mar 17, 2021 9:00 AM - 11:45 AM Z28 (Z28)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

10:15 AM - 10:30 AM

[17a-Z28-5] Comparison of Al-adatom Concentrations near Step-edges during CVD of SiC on Si- and C-faces

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

10:30 AM - 10:45 AM

[17a-Z28-6] Analysis of Surface-diffusion Lengths of Carbon- and Nitrogen-Containing Molecules during Homoepitaxial Growth of 4H-SiC (0001) under Silicon-rich Conditions

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)