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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS₂) Flakes at Low Temperatures

〇(D)Abdul A Kuddus¹, Arifuzzaman Rajib¹, Shimomura Kazushi¹, Yokoyama Kojun¹, Keiji Ueno¹ (1.Saitama University)

1:45 PM - 2:00 PM

▼ [19p-Z33-2] Aluminum titanium oxide Thin Films Synthesized by Mist-CVD and Applied as a Gate Insulating Layer

〇(D)Arifuzzaman Rajib Rajib¹, Abdul Kuddus¹, Tomohiro Shida¹, Kojun Yokoyama¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama Univ.)

2:00 PM - 2:15 PM

△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

〇(D)Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

2:15 PM - 2:30 PM

△ [19p-Z33-4] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (6)

〇Junnosuke Sano¹, Yohei Satou¹, Yuuta Ide¹, Chihiro Yoshida¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Yamanashi Univ.)

2:30 PM - 2:45 PM

△ [19p-Z33-5] Thermal stability of resistance of ion-implanted amorphous-InGaZnO film

〇Keisuke Yasuta¹, Toshimasa Ui¹, Junichi Tatemichi¹ (1.NISSIN ION EQUIPMENT)

2:45 PM - 3:00 PM

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In₂O₃:H for thin-film transistors

〇(M1)Taiki Kataoka¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech, 2.Center for Nanotechnology Kochi Univ. of Tech)

3:15 PM - 3:30 PM

△ [19p-Z33-7] Effect of varied surface modifications of cyclic olefin polymer substrates on the oriented crystal growth of ZnO thin films

〇(D)Tomoaki Oga¹, Naho Kaneko¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

3:30 PM - 3:45 PM

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films

〇Michitaka Fukumoto¹, Yasushi Hirose¹, Shoichiro Nakao¹, Koji Kimura², Koichi Hayashi², Yuki Sugisawa³, Daiichiro Sekiba³, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Nagoya Inst. of Technol., 3.UTTAC)

3:45 PM - 4:00 PM

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO₃ (A = Ba, Ca, and Sr)

〇(DC)Mian Wei¹, Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ.)

4:00 PM - 4:15 PM

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu₂ZnI₄

〇(M1)Hideaki Yamada¹, Shuji Okada¹, Yuta Tanida¹, Naoomi Yamada¹ (1.Chubu Univ.)

4:15 PM - 4:30 PM

△ [19p-Z33-11] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

〇Kohei Shima¹, Kentaro Furusawa¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

4:45 PM - 5:00 PM

△ [19p-Z33-12] Oxygen vacancy formation around Sn in p-type semiconducting Sn-Nb complex oxides

〇Akane Samizo¹, Naoto Kikuchi², Makoto Miinohara², Kyoko Bando², Yoshihiro Aiura², Ko Mibu³, Keishi Nishio¹ (1.Tokyo Univ. Sci., 2.AIST, 3.Nagoya Inst. Tech.)

5:00 PM - 5:15 PM

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO₄ by thermal annealing in oxygen

〇(M1)Yuka Dobashi¹, Naoto Kikuchi², Makoto Minohara², Akane Samizo¹, Keishi Nishio¹ (1.Tokyo Univ. Sci., 2.AIST)

5:15 PM - 5:30 PM

△ [19p-Z33-14] Water Splitting Over SrTiO3 Model Photocatalyst With Comb-shaped Pt Electrode

〇Soraya Shizumi¹, Tatsuro Endo¹, Tsutomu Minegishi², Masakazu Sugiyama² (1.Univ. Tokyo., 2.RCAST, Univ. Tokyo.)

5:30 PM - 5:45 PM

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO₂ thin films

〇Hikaru Takeda¹, Shuhei Matsuzawa², Takeru Okada², Makoto Kanzaki³, Katsuyoshi Washio² (1.Sch. Eng., Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ., 3.Grad. Sch. Bio Eng., Tohoku Univ.)

5:45 PM - 6:00 PM

△ [19p-Z33-16] Optical properties of rutile Sn_1-xGe_xO₂ thin films

〇(M1)Yo Nagashima¹, Yasushi Hirose¹, Masato Tsuchii¹, Michitaka Fukumoto¹, Tetsuya Hasegawa¹ (1.Tokyo Univ.)

Session information

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS₂) Flakes at Low Temperatures

▼ [19p-Z33-2] Aluminum titanium oxide Thin Films Synthesized by Mist-CVD and Applied as a Gate Insulating Layer

△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

△ [19p-Z33-4] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (6)

△ [19p-Z33-5] Thermal stability of resistance of ion-implanted amorphous-InGaZnO film

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In₂O₃:H for thin-film transistors

△ [19p-Z33-7] Effect of varied surface modifications of cyclic olefin polymer substrates on the oriented crystal growth of ZnO thin films

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO₃ (A = Ba, Ca, and Sr)

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu₂ZnI₄

△ [19p-Z33-11] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

△ [19p-Z33-12] Oxygen vacancy formation around Sn in p-type semiconducting Sn-Nb complex oxides

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO₄ by thermal annealing in oxygen

△ [19p-Z33-14] Water Splitting Over SrTiO3 Model Photocatalyst With Comb-shaped Pt Electrode

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO₂ thin films

△ [19p-Z33-16] Optical properties of rutile Sn_1-xGe_xO₂ thin films

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Session information

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS2) Flakes at Low Temperatures

▼ [19p-Z33-2] Aluminum titanium oxide Thin Films Synthesized by Mist-CVD and Applied as a Gate Insulating Layer

△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

△ [19p-Z33-4] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (6)

△ [19p-Z33-5] Thermal stability of resistance of ion-implanted amorphous-InGaZnO film

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In2O3:H for thin-film transistors

△ [19p-Z33-7] Effect of varied surface modifications of cyclic olefin polymer substrates on the oriented crystal growth of ZnO thin films

△ [19p-Z33-8] Origin of high mobility in W-doped SnO2 thin films

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO3 (A = Ba, Ca, and Sr)

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu2ZnI4

△ [19p-Z33-11] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

△ [19p-Z33-12] Oxygen vacancy formation around Sn in p-type semiconducting Sn-Nb complex oxides

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO4 by thermal annealing in oxygen

△ [19p-Z33-14] Water Splitting Over SrTiO3 Model Photocatalyst With Comb-shaped Pt Electrode

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO2 thin films

△ [19p-Z33-16] Optical properties of rutile Sn1-xGexO2 thin films

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▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS₂) Flakes at Low Temperatures

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In₂O₃:H for thin-film transistors

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO₃ (A = Ba, Ca, and Sr)

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu₂ZnI₄

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO₄ by thermal annealing in oxygen

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO₂ thin films

△ [19p-Z33-16] Optical properties of rutile Sn_1-xGe_xO₂ thin films