The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[16a-Z13-1~12] 13.3 Insulator technology

Tue. Mar 16, 2021 9:00 AM - 12:15 PM Z13 (Z13)

Shinichi Takagi(Univ. of Tokyo)

11:45 AM - 12:00 PM

[16a-Z13-11] Anodic SiO2 film fabricated in high pressure steam - Applied voltage dependence -

Takumi Katata1, Takuma Yatsuhashi1, Yan Wu1, Yoshihiro Takahashi1 (1.Nihon Univ.)

Keywords:anodic oxidation, high pressure ateam, SiO2 films

The process current during anodic oxidation in high pressure steam was investigated. An abnormally large current was measured under high steam pressure and also high applied voltage conditions. It was confirmed that worse electric properties were observed from the oxide film fabricated by the process with the abnormally current.