[16a-Z16-1~11] 13.7 Compound and power electron devices and process technology

△ [16a-Z16-6] Investigation of Post-Deposition Annealing Conditions for Improving Interface Property of SiO₂/GaN MOS Devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:FGA, GaN MOS, GaOx

We have reported that good interfacial electrical properties can be obtained by post-deposition oxidation of SiO₂/GaO_x/GaN stack structures with an ultrathin GaO_x interlayer. On the other hand, we also reported that forming gas annealing of SiO₂/GaO_x/GaN structures leads to fixed charge generation at the GaO_x interlayer and the negative shift of V_FB. In this study, we investigated the post-deposition annealing conditions for improving the interface property of SiO₂/GaN MOS devices.