[16a-Z26-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [16a-Z26-2] Subthreshold Characteristics of Silicon GAA Nanowire MOSFET at Low Temperatures

〇Shohei Sekiguchi¹, Min-Ju Ahn¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Univ. of Tokyo)

Keywords:subthreshold swing, gate-all-around, body factor

To investigate the effect of body factor (γ), we fabricated a silicon GAA nanowire transistor with γ=0 and SS=60mV/dec at room temperature and carefully measured SS at various temperatures. It is experimentally confirmed that even with an ideal MOSFET with γ=0, SS saturates at extremely low temperatures.