[16a-Z26-1~11] 13.5 デバイス／配線／集積化技術

▲ [16a-Z26-5] High-Frequency Rectifying Characteristics of Si Nanowire Single-Electron Transistor

〇(D)Alka Singh¹、Shogo Matsumoto²、Hiroaki Satoh^2,3、Hiroshi Inokawa^1,2,3 (1.GSST, Shizuoka University、2.GSIST, Shizuoka University、3.RIE, Shizuoka University)

キーワード：semiconductor, single-electron transistor, rectifier

Rectifying operation beyond the conventional cutoff
frequency of single-electron transistors (SETs) [1] is
due to asymmetry in the tunneling rate with respect
to drain voltage, which is responsible for asymmetry
in the drain current, resulting in rectification [2].
Heavily doped Si nanowire-based SET is used for
verifying it experimentally (Fig. 1).