[16a-Z26-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16a-Z26-7] Optimal point of accuracy of single-electron transfer using a dynamic quantum dot

〇Gento Yamahata¹, Nathan Johnson¹, Akira Fujiwara¹ (1.NTT Basic Research Labs.)

Keywords:single electron, silicon, non-equilibrium

While high-accuracy single-electron transfer in the GHz regime has been reported, there is no systematic investigation of an optimal device structure. Here, we numerically calculate probabilities of non-equilibrium electron capture and find that there is an optimal point in terms of the accuracy when changing the device structure (gate-dot capacitive coupling).