[16a-Z31-1~11] 17.2 Graphene

[16a-Z31-8] Layer specific anomalous screening (LSAS) in twisted bilayer graphene/h-BN junctions

〇Yuta Seo¹, Satoru Masubuchi¹, Rai Moriya¹, Kenji Watanabe², Takashi Taniguchi^1,2, Mikito Koshino³, Tomoki Machida^1,4 (1.IIS Univ. Tokyo, 2.NIMS, 3.Osaka Univ., 4.CREST-JST)

Keywords:graphene, twisted bilayer graphene

We observed an anomalous gate screening behavior in the metal topgate/h-BN/twisted bilayer graphene (TBG)/h-BN/graphite backgate structure. When we carried out electrical transport measurements in TBG at T = 1.6 K applying the topgate and backgate voltage, we found that in specific range of backgate voltage, graphite back gate did not work at all regardress of the value of topgate voltage. We will discuss the characteristics of this phenomenon and it's mechanism such as the relationship between the phenomenon and the band structure of TBG.