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6 Thin Films and Surfaces » 6.3 Oxide electronics

[16a-Z33-1~10] 6.3 Oxide electronics

Tue. Mar 16, 2021 9:00 AM - 12:00 PM Z33 (Z33)

Hisashi Shima(AIST), Atsushi Fukuchi(Hokkaido Univ.)

10:45 AM - 11:00 AM

[16a-Z33-6] Characterization of resistive switching device using HfO₂ thin film by solution coating method

〇Ryota Matsumura¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ.)

Keywords:resistive switching device