[16a-Z33-1~10] 6.3 Oxide electronics

[16a-Z33-7] In-situ TEM of Cu movement in MoO_x/Al₂O₃ double layer CBRAM

〇Masashi Arita¹, Ryusuke Ishikawa¹, Atsushi Tsurumaki-Fukuchi¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

Keywords:resistive RAM, in-situ TEM, double-layer CBRAM

In-situ TEM was performed on the double-layer CBRAM of MoO_x/Al₂O₃ sandwiched beteween Cu and TiN electrodes. The Cu movement and the role of Al₂O₃ on the resistive RAM performance will be discussed.