[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-5] Growth of InGaN Film on ScAlMgO₄ Substrate by RF-MBE

〇(M1)Seiya Kayamoto¹, Yuuya Kuroda¹, Yuuichi Wada¹, Takashi Fujii^1,2, Shinichiro Mouri¹, Yuuji Shiraishi², Tsuguo Fukuda², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal Lab.)

Keywords:nitride semiconductor, ScAlMgO4, crystal growth

ScAlMgO₄ (SAM) has a lattice mismatching as small as 1.8% in a-axis with GaN, and lattice matching in a-axis with In_0.17Ga_0.83N. Moreover, we obtain SAM crystal with no dislocation. Therefore, SAM would be suitable for substrates for nitride semiconductor growth. We carried out InGaN thin films growth on SAM substrate with flux ratio of In and Ga as a parameter using RF-MBE which enable low temperature growth under high vacuum, and reviewed growth conditions. Although there were In droplets in surface, we confirmed low In-composition InGaN on SAM substrate using RF-MBE at the growth temperature was 650℃.