[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-6] Emission Enhancement Mechanism of Surface Plasmon Resonance in Polar/Semipolar InGaN/GaN Quantum Wells measured by Time-Resolved Photoluminescence

〇Kento Ikeda¹, Kanata Kawai¹, Jun Kametani¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

Keywords:Surface plasmon, InGaN/GaN, Semipolar

The luminescence mechanism of InGaN/GaN quantum wells is greatly affected by the quantum confinement Stark effect (QCSE), and the luminescence efficiency is significantly reduced in the blue to green emission wavelengths. In order to further elucidate the mechanism of SP resonance enhancement, we have performed time-resolved luminescence lifetime measurements on Ag- or Al-coated samples. In order to further elucidate the mechanism of SP resonance, we performed time-resolved luminescence lifetime measurements using Ag- or Al-coated samples.