[16p-P01-1~16] 15.4 III-V-group nitride crystals

[16p-P01-7] Emission Enhancement by Surface Plasmon Resonance Using Aluminum Thin Films in polar/semi-polar InGaN/GaN Quantum Wells

〇Kanata Kawai¹, Kento Ikeda¹, Jun Kametani¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

Keywords:surface plasmon, InGaN/GaN, semi-polar

InGaN/GaN quantum wells exhibit a significant decrease in luminescence efficiency at the green wavelength due to the quantum confinement Stark effect (QCSE).Although QCSE can be reduced in semi-polar InGaN/GaN, we have previously found that surface plasmon resonance using Ag thin film deposited on the surface of InGaN/GaN can enhance the emission more than that of polar samples.In the present study, we attempted to enhance the luminescence by using Al thin film and analyzed the luminescence mechanism by comparison with Ag thin film and time-resolved luminescence lifetime measurement.