[16p-P02-1~4] 15.5 Group IV crystals and alloys

[16p-P02-4] Suppression of the crack formation in strained SiGe by using Ge-on-Si instead of Ge substrates

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

Keywords:SiGe, strain