Poster presentation

[16p-P02-1~4] 15.5 Group IV crystals and alloys

Tue. Mar 16, 2021 1:00 PM - 1:50 PM P02 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:50 PM

[16p-P02-1] Laser-induced Liquid-phase Crystallization of GeSn Alloy on Quartz Substrate

〇Mizuki Kuniyoshi^1,2, Naoto Tabuchi², Takuji Hosoi², Takayoshi Shimura², Heiji Watanabe² (1.ULVAC, Inc., 2.Osaka Univ.)

1:00 PM - 1:50 PM

[16p-P02-2] Effects of uniaxial strain direction on luminescence properties for strained Ge microbridges structures

〇(M1)Takahiro Inoue¹, Youya Wagatsuma¹, Kodai Yamada¹, Kentarou Sawano¹ (1.Adv.Res.Lab., Tokyo City Univ)

1:00 PM - 1:50 PM

[16p-P02-3] Room temperature EL from strained Ge-on-Si(111) diode structure

〇Yuwa Sugiura¹, Youya Wagatsuma¹, Koudai Yamada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya², Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.CSRN, Osaka Univ.)

1:00 PM - 1:50 PM

[16p-P02-4] Suppression of the crack formation in strained SiGe by using Ge-on-Si instead of Ge substrates

〇Youya Wagatsuma¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Adv. Res. Lab., Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

Oral presentation

[17a-Z33-1~8] 15.5 Group IV crystals and alloys

Wed. Mar 17, 2021 10:00 AM - 12:00 PM Z33 (Z33)

Keisuke Arimoto(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[17a-Z33-1] Effects of Annealing on Sn-Doped Ge / Insulator Grown by Interface-Modulated Solid-Phase Crystallization

〇Masanori Chiyozono¹, Ryutaro Hara¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

10:15 AM - 10:30 AM

[17a-Z33-2] Low-Temperature Formation of Sn-Doped n-type Ge by Bi-Induced Layer Exchange Crystallization

〇Satoshi Kawahara¹, Liu Sen¹, Sadoh Taizoh¹ (1.Kyushu Univ.)

10:30 AM - 10:45 AM

[17a-Z33-3] Thickness-Dependent Low-Temperature Solid-Phase Growth Characteristics of
SiSn Thin-Films on Insulator

〇(B)Kota Okamoto¹, Tomohiro Kosugi¹, Taizo Sadoh¹ (1.Kyushu Univ.)

10:45 AM - 11:00 AM

[17a-Z33-4] Effects of Sn-Doping on Solid-Phase Crystallization of Si Thin-Films on Insulator

〇Tomohiro Kosugi¹, Kota Okamoto¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

11:00 AM - 11:15 AM

[17a-Z33-5] Precursor modulation effects on solid-phase crystallization of Group Ⅳ semiconductor alloy thin films

〇Takuto Mizoguchi¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Tsukuba Univ.)

11:15 AM - 11:30 AM

[17a-Z33-6] Ni-induced lateral crystallization of a high-density amorphous Ge thin film

〇Takamitsu Ishiyama¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [17a-Z33-7] Mechanism for improving carrier mobility of solid-phase-crystallized Ge thin films by GeO₂ underlayer

〇Toshifumi Imajo^1,2, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

11:45 AM - 12:00 PM

[17a-Z33-8] N-type control of solid-phase-crystallized GeSn thin films using spin-on-glass technique
and its thermoelectric application

〇Tomoki Ozawa¹, Toshifumi Imajo¹, Takashi Suemasu¹, Kaoru Toko^1,2 (1.Univ. of Tsukuba, 2.JST PRESTO)

Oral presentation

[17p-Z33-1~8] 15.5 Group IV crystals and alloys

Wed. Mar 17, 2021 1:30 PM - 3:30 PM Z33 (Z33)

Taizoh Sadoh(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[17p-Z33-1] [Young Scientist Presentation Award Speech] Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control

〇Kodai Yamada¹, Yusuke Hoshi¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

1:45 PM - 2:00 PM

▲ [17p-Z33-2] Realization and Characterization of Vertical Ge n⁺/p Structure Towards Nanowire Transistor Applications

〇(M2)Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

2:00 PM - 2:15 PM

[17p-Z33-3] Micro-photoreflectance spectroscopy of higher-lying quantized energy levels of UTB-GeOI

〇Takumi Kouhei¹, Yuhsuke Yasutake¹, Wen Hsin Chang², Hiroyuki Ishii², Toshifumi Irisawa², Tatsuro Maeda², Susumu Fukatsu¹ (1.UTokyo, 2.AIST)

2:15 PM - 2:30 PM

[17p-Z33-4] Epitaxial growth of Si_1−xSn_x layers on Si(001) substrates

〇Masashi Kurosawa¹, Ryuji Tange¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:30 PM - 2:45 PM

△ [17p-Z33-5] Triaxial Strain Evaluation for Mesa-structured Carbon-doped Silicon using X-ray Reciprocal Space Mapping

〇Kazutoshi Yoshioka¹, Masato Koharada¹, Gai Ogasawara¹, Ichiro Hirosawa², Takeshi Watanabe², Ryo Yokogawa^1,3, Atsushi Ogura^1,3 (1.Meiji Univ., 2.JASRI, 3.MREL)

2:45 PM - 3:00 PM

[17p-Z33-6] Comparison between step and continuous composition grading methods for formation of SiGe on Si(110) substrates

〇Miki Horiuchi¹, Shingo Saito¹, Kousuke Hara¹, Junji Yamanka¹, Keisuke Arimoto¹ (1.Univ.Yamanashi)

3:00 PM - 3:15 PM

[17p-Z33-7] Research on in situ Sb doping of tensile-strained Si/SiGe/Si(110) heterostructures

〇(B)Mizuki Kikkawa¹, Daichi Namiuchi¹, Beichen Chen¹, Miki Horiuchi¹, Taisuke Fujisawa¹, Junji Yamanaka¹, Kosuke Hara¹, Kiyokazu Nakagawa¹, Keisuke Arimoto¹ (1.Yamanashi Univ.)

3:15 PM - 3:30 PM

[17p-Z33-8] Synthesis temperature effects on the secondary battery characteristics of multilayer graphene formed by layer exchange

〇Taisei Suzuki¹, Hiromasa Murata¹, Yuya Kado², Noriko Yoshizawa², Takashi Suemasu¹, Kaoru Toko¹ (1.Tsukuba Univ., 2.AIST)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16p-P02-1~4] 15.5 Group IV crystals and alloys

[16p-P02-1] Laser-induced Liquid-phase Crystallization of GeSn Alloy on Quartz Substrate

[16p-P02-2] Effects of uniaxial strain direction on luminescence properties for strained Ge microbridges structures

[16p-P02-3] Room temperature EL from strained Ge-on-Si(111) diode structure

[16p-P02-4] Suppression of the crack formation in strained SiGe by using Ge-on-Si instead of Ge substrates

[17a-Z33-1~8] 15.5 Group IV crystals and alloys

[17a-Z33-1] Effects of Annealing on Sn-Doped Ge / Insulator Grown by Interface-Modulated Solid-Phase Crystallization

[17a-Z33-2] Low-Temperature Formation of Sn-Doped n-type Ge by Bi-Induced Layer Exchange Crystallization

[17a-Z33-3] Thickness-Dependent Low-Temperature Solid-Phase Growth Characteristics of
SiSn Thin-Films on Insulator

[17a-Z33-4] Effects of Sn-Doping on Solid-Phase Crystallization of Si Thin-Films on Insulator

[17a-Z33-5] Precursor modulation effects on solid-phase crystallization of Group Ⅳ semiconductor alloy thin films

[17a-Z33-6] Ni-induced lateral crystallization of a high-density amorphous Ge thin film

△ [17a-Z33-7] Mechanism for improving carrier mobility of solid-phase-crystallized Ge thin films by GeO₂ underlayer

[17a-Z33-8] N-type control of solid-phase-crystallized GeSn thin films using spin-on-glass technique
and its thermoelectric application

[17p-Z33-1~8] 15.5 Group IV crystals and alloys

[17p-Z33-1] [Young Scientist Presentation Award Speech] Room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control

▲ [17p-Z33-2] Realization and Characterization of Vertical Ge n⁺/p Structure Towards Nanowire Transistor Applications

[17p-Z33-3] Micro-photoreflectance spectroscopy of higher-lying quantized energy levels of UTB-GeOI

[17p-Z33-4] Epitaxial growth of Si_1−xSn_x layers on Si(001) substrates

△ [17p-Z33-5] Triaxial Strain Evaluation for Mesa-structured Carbon-doped Silicon using X-ray Reciprocal Space Mapping

[17p-Z33-6] Comparison between step and continuous composition grading methods for formation of SiGe on Si(110) substrates

[17p-Z33-7] Research on in situ Sb doping of tensile-strained Si/SiGe/Si(110) heterostructures

[17p-Z33-8] Synthesis temperature effects on the secondary battery characteristics of multilayer graphene formed by layer exchange

Authenticate

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[16p-P02-1~4] 15.5 Group IV crystals and alloys

[17a-Z33-1~8] 15.5 Group IV crystals and alloys

△ [17a-Z33-7] Mechanism for improving carrier mobility of solid-phase-crystallized Ge thin films by GeO2 underlayer

[17p-Z33-1~8] 15.5 Group IV crystals and alloys

▲ [17p-Z33-2] Realization and Characterization of Vertical Ge n+/p Structure Towards Nanowire Transistor Applications

△ [17p-Z33-5] Triaxial Strain Evaluation for Mesa-structured Carbon-doped Silicon using X-ray Reciprocal Space Mapping

Authenticate

△ [17a-Z33-7] Mechanism for improving carrier mobility of solid-phase-crystallized Ge thin films by GeO₂ underlayer

▲ [17p-Z33-2] Realization and Characterization of Vertical Ge n⁺/p Structure Towards Nanowire Transistor Applications