[16p-P10-1~2] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-P10-1] Ultrafast relaxation processes of photoinjected valence holes on silicon surface

〇(M1)Yusuke Sato¹, Jun'ichi Kanasaki¹, Katsumi Tanimura², Isamu Yamamoto³, Junpei Azuma³, Susumu Fukatsu⁴ (1.Osaka City Univ., 2.Osaka Univ., 3.Saga Univ., 4.Tokyo Univ.)

Keywords:semiconductor