The 68th JSAP Spring Meeting 2021

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[16p-P12-1~4] 13.3 Insulator technology

Tue. Mar 16, 2021 5:00 PM - 5:50 PM P12 (Poster)

5:00 PM - 5:50 PM

[16p-P12-1] Dependence of penetration barrier of alkali metal ions into SiNx and SiOx films on ion radius

Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)

Keywords:insulator film, alkali metal ions, penetration barrier

In the previous report, the smaller the ionic radius of the ion, the smaller the penetration barrier to the SiO2 and Si3N4 films tended to be. However, the cation did not have this tendency. In order to clarify the cause, the penetration barrier of alkali metal ions through the SiNx and SiOx films with defects was calculated. For alkali metal ions, the smaller the ionic radius, the easier it is not always to penetrate the films. The more easily penetrated ions differ depending on the film type and vacancies.