[16p-P12-1~4] 13.3 Insulator technology

[16p-P12-2] Theoretical Study of Strain Effect on Vacancies in SiO₂

〇(M1C)Takehiro Nishimura¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

Keywords:dielectric breakdown, defect, first principles calculation

We have studied the strain effect on defects of Si oxide film by using the first principles calculation so as to clarify the dielectric breakdown for 3D Si MOSFET.