[16p-P12-1~4] 13.3 Insulator technology

[16p-P12-4] Mechanism of ferroelectric phase evolution for ZrO₂ thin film by wet annealing

〇Shigehisa Shibayama¹, Jotaro Nagano¹, Koji Asaka¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:ZrO2, ferroelectric, annealing