[16p-Z07-1~11] Power device technology trends and future prospects

[16p-Z07-3] Progress in SiC Power MOSFETs and Reduction of Interface State Density

〇Tsunenobu Kimoto¹, Takuma Kobayashi^1,2, Keita Tachiki¹, Yuichiro Matsushita² (1.Kyoto Univ., 2.Tokyo Inst. Tech.)

Keywords:SiC, power device, MOSFET

SiC power MOSFETs have been adopted in various systems, demonstrating remarkable energy saving. However, there still remain interface defects in the oxide/SiC structures, which limit the performance and reliablity of SiC power MOSFETs. In this paper, recent progress in development of SiC power MOSFETs and attempts to reduce the interface defects are presented.