[16p-Z07-1~11] Power device technology trends and future prospects

[16p-Z07-6] Current status and future prospects of vertical GaN power devices

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:Gallium nitride, Power device, Ion Implantation

Vertical GaN devices are expected as next-generation low-loss power switching devices to replace Si and SiC. Due to resent advances in bulk GaN crystal growth, various process technologies for fabricating the vertical GaN devices have been developed, and the vertical GaN devices with high breakdown voltage have been demonstrated. However, there are still many challenges for realizing practical GaN devices. In this presentation, we will introduce the current status, issues and future prospects of vertical GaN devices, including the latest research results.