Symposium (Oral)

[16p-Z07-1~11] Power device technology trends and future prospects

Tue. Mar 16, 2021 1:30 PM - 5:30 PM Z07 (Z07)

Takashi Kanemura(MIRISE Technologies), Takashi Tsuno(住友電気工業株式会社)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[16p-Z07-1] Technology Trends of Silicon IGBT and Scaling IGBT

〇Toshiro Hiramoto¹, Ichiro Omura² (1.The Univ. of Tokyo, 2.Kyushu Inst. of Tech.)

2:00 PM - 2:15 PM

[16p-Z07-2] Si Super Junction BJT with Ultra-High Current Gain and Low ON-resistance: Fabrication and Electrical Characteristics

〇Makoto Hashimoto¹, Kouji Yano², Naoki Matsukawa¹, Akiko Matsuo¹, Akio Mouraguchi¹, Manabu Arai³, Naohiro Shimizu⁴ (1.New Japan Radio, 2.Univ. of Yamanashi, 3.IMaSS, Nagoya Univ., 4.CLPS, Nagoya Univ.)

2:15 PM - 2:45 PM

[16p-Z07-3] Progress in SiC Power MOSFETs and Reduction of Interface State Density

〇Tsunenobu Kimoto¹, Takuma Kobayashi^1,2, Keita Tachiki¹, Yuichiro Matsushita² (1.Kyoto Univ., 2.Tokyo Inst. Tech.)

2:45 PM - 3:00 PM

[16p-Z07-4] Effect of Electron Capture in SiC MOSFETs on V_th under High Gate Oxide Electric Field Stress

〇Munetaka Noguchi¹, Akihiro Koyama¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Naruhisa Miura¹ (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

3:00 PM - 3:30 PM

[16p-Z07-5] Diamond power semiconductor ~ wafer, process, device ~

〇Norio TOKUDA¹, Xufang Zhang¹, Tsubasa Matsumoto¹, Takao Inokuma¹, Christoph E. Nebel^1,2, Satoshi Yamasaki¹ (1.Kanazawa Univ., 2.Diamond and Carbon Applications)

3:45 PM - 4:15 PM

[16p-Z07-6] Current status and future prospects of vertical GaN power devices

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Masaharu Edo¹ (1.Fuji Electric)

4:15 PM - 4:30 PM

[16p-Z07-7] GaN MOSFET characteristics of the controlled interface for vertical power devices

〇Hidemoto Tomita¹, Sayaka Harada¹, Takashi Okawa¹, Yoshitaka Nagasato¹, Li Liu², Toshiyuki Kawaharamura² (1.MIRISE Technologies Corp., 2.Kochi Univ. of Tech.)

4:30 PM - 4:45 PM

[16p-Z07-8] Reduction of ultra-high-pressure annealing temperature for Mg-ion-implanted GaN

〇(M1)Kazufumi Hirukawa¹, Hideki Sakurai^1,2,3, Hajime Fujikura⁴, Masahiro Horita^1,2, Michal Bockowski^2,5, Youhei Otoki⁴, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, 3.ULVAC ISET, 4.SCIOCS, 5.UNIPRESS)

4:45 PM - 5:00 PM

[16p-Z07-9] Impact of practical realization of gallium oxide electronic devices and their p-type layers

〇Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

5:00 PM - 5:15 PM

[16p-Z07-10] Practical Realization of Gallium Oxide Devices and p-type Layers Characteristics

〇Takuto Igawa¹, Takashi Shinohe¹, Fujio Okui¹, Toshimi Hitora¹ (1.FLOSFIA INC.)

5:15 PM - 5:30 PM

[16p-Z07-11] 1.3 kV normally-off β-Ga₂O₃ vertical transistor with HfO₂ gate-insulator

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Tech.)

Sessions

Symposium » Power device technology trends and future prospects