[16p-Z07-1~11] Power device technology trends and future prospects

[16p-Z07-8] Reduction of ultra-high-pressure annealing temperature for Mg-ion-implanted GaN

〇(M1)Kazufumi Hirukawa¹, Hideki Sakurai^1,2,3, Hajime Fujikura⁴, Masahiro Horita^1,2, Michal Bockowski^2,5, Youhei Otoki⁴, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, 3.ULVAC ISET, 4.SCIOCS, 5.UNIPRESS)

Keywords:GaN, Mg ions plantation, Ultra High Pressure Annealing