[16p-Z12-1~17] 8.8 Division of Plasma Electronics 30th Anniversary Special Session

[16p-Z12-13] Epitaxial Growth of (ZnO)_x(InN)_1-x Films by Magnetron Sputtering: Effects of Substrate Surface Polarity

〇Ryota Narishige¹, Kentaro Kaneshima¹, Seiichi Urakawa¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Takamasa Okumura¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

Keywords:ZION, oxynitride semiconductor, heteroepitaxy

We have recently developed novel semiconductors, (ZnO)_x(InN)_1-x (called “ZION” hereinafter), which are pseudo-binary alloys of ZnO and InN. ZION have tunable band gaps across the entire visible spectrum,high exciton binding energy of 30–60 meV, and high optical absorption coefficients of 10⁵ cm^-1, making ZION promising materials for various kinds of optoelectronic devices. Recently, we reported that ZION films were epitaxially grown on different substrates, and the height distribution of the substrates which is characterized by skewness and the lattice mismatch with the substrates determines the quality of ZION films. However, it was also found that even with the same skewness and lattice mismatch, the quality of the film differs greatly when the surface polarity of the substrate is different. Therefore, in this study, ZION films were fabricated on O-polar and Zn-polar ZnO substrates, and the effect of polarity on crystal growth was investigated.