[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi₂Se₃ and their electrical properties

〇Takamu Nozaki¹, Tomohiro Kondo¹, Hiroki Ohta², Ken Yonezawa², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.Kenix Co., Ltd.)

Keywords:topological insulator

Our goal is to fabricate new artificial superlattice topological insulators based on the topological insulator Bi₂Se₃. However, Bi₂Se₃ has a problem of electron doping due to Se defects, and it is essential to reduce the bulk carrier concentration. In this study, we examined the low-temperature growth of Bi₂Se₃ in order to reduce the bulk carrier concentration.