Oral presentation

[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Mar 16, 2021 9:00 AM - 12:00 PM Z23 (Z23)

Haruhiko Udono(Ibaraki Univ.), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-Z23-1] Investigation of the effect of substrate temperature on the characteristics of
BaSi₂ films on glass substrates formed by RF sputtering

〇Ryota Koitabashi¹, Taira Nemoto¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corporation)

9:15 AM - 9:30 AM

[16a-Z23-2] Characterizations of B-doped BaSi₂ films formed by sputtering

〇Hayato Hasebe¹, Taira Nemoto¹, Ryota Koitabashi¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corporation)

9:30 AM - 9:45 AM

[16a-Z23-3] High Refractive Index and Low Extinction Coefficient in Infrared Spectrum of Polycrystalline β-FeSi₂ Thin Film Prepared by Co-sputtering

〇(M2)Xuanwei Zhang¹, Kyoko Namura¹, Motofumi Suzuki¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

[16a-Z23-4] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin films and their PL properties

〇(B)Ren Yoshihara¹, Hiroki Nishi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

10:00 AM - 10:15 AM

[16a-Z23-5] Application of mechanochemical effects to close-spaced evaporation of BaSi₂

〇Kosuke Hara¹, Chiaya Yamamoto², Junji Yamanaka², Keisuke Arimoto¹ (1.CCST, Univ. of Yamanashi, 2.CIA, Univ. of Yamanashi)

10:15 AM - 10:30 AM

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi₂ films and its mechanisms by ab initio studies

〇Sho Aonuki¹, Yudai Yamashita¹, Zhihao Xu¹, Kazuhiro Gotoh², Kaoru Toko¹, Noritaka Usami², Dmitri Migas³, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ., 3.Beralusian State Univ. Info. Radio.)

10:45 AM - 11:00 AM

[16a-Z23-7] Effect of post annealing on photoresponsivity of B-doped p-BaSi₂ films

〇Shunsuke Narita¹, Yudai Yamashita¹, Sho Aonuki¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:00 AM - 11:15 AM

[16a-Z23-8] Effect of in situ annealing on BaSi₂ evaporated films with low deposition rate

〇Souma Nishio¹, Shunnosuke Mori¹, Katsushi Nishino¹ (1.Tokushima Univ.)

11:15 AM - 11:30 AM

[16a-Z23-9] Evaluation of thermoelectric properties of B-doped BaSi₂ films grown by MBE

〇Ryuichi Yoshida¹, Mikie Tsuji¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:30 AM - 11:45 AM

[16a-Z23-10] Phase relationship of Sr-Si system around Si concentration of 66.7 at. %

〇Motoharu Imai¹ (1.NIMS)

11:45 AM - 12:00 PM

[16a-Z23-11] Bulk moduli and bulk thermal expansion coefficients of silicides

〇Motoharu Imai¹, Takanobu Hiroto¹ (1.NIMS)

Oral presentation

[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Mar 16, 2021 1:30 PM - 4:15 PM Z23 (Z23)

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi₂Se₃ and their electrical properties

〇Takamu Nozaki¹, Tomohiro Kondo¹, Hiroki Ohta², Ken Yonezawa², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.Kenix Co., Ltd.)

1:45 PM - 2:00 PM

▼ [16p-Z23-2] A New Synthesis Technique for type-II Ge Clathrate Film

〇(D)Rahul Kumar¹, Yuta Hazama¹, Fumitaka Ohashi¹, Himanshu Shekhar Jha¹, Tetsuji Kume¹ (1.Gifu University)

2:00 PM - 2:15 PM

▲ [16p-Z23-3] Synthesis of ternary type II clathrate films using AlGe alloy

〇Tun Naing Aye¹, Rahul Kumar¹, Himanshu shekhar Jha¹, Fumitaka Ohashi¹, Tetsuji Kume¹ (1.Faculty of Engineering, Gifu University)

2:15 PM - 2:30 PM

[16p-Z23-4] CaGe₂ film growth by close-spaced evaporation and transformation to GeH

〇Kosuke Hara¹, Shin Kunieda¹, Junji Yamanaka², Keisuke Arimoto¹, Mai Ito³, Masashi Kurosawa^3,4 (1.CCST, Univ. of Yamanashi, 2.CIA, Univ. of Yamanashi, 3.Grad. Sch. of Eng., Nagoya Univ., 4.IAR, Nagoya Univ.)

2:30 PM - 2:45 PM

[16p-Z23-5] Hydrogen simulation in the pyrite-type sulfide semiconductor FeS₂

〇Hirotaka Okabe¹, Masatoshi Hiraishi¹, Soshi Takeshita^1,2, Akihiro Koda^1,2, Kenji Kojima³, Takeo Ohsawa⁴, Naoki Ohashi⁴, Ryosuke Kadono^1,2 (1.KEK-IMSS, 2.SOKENDAI, 3.TRIUMF, 4.NIMS)

2:45 PM - 3:00 PM

[16p-Z23-6] Optical dynamics prediction by first-principles simulation and AI based inverse design approach for core-shell colloidal quantum dot

〇(B)Hibiki Yoshida¹, Katsuyoshi Sakamoto¹, Kouichi Yamaguti¹, Qing Shen¹, Yoshitaka Okada³, Tomah Sogabe^1,2,3 (1.Univ. of Electro-Comm, 2.Grid inc., 3.The Univ. of Tokyo)

3:15 PM - 3:30 PM

[16p-Z23-7] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion

〇Naoki Mizunuma¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:30 PM - 3:45 PM

[16p-Z23-8] Relationship between Bias-voltage and Photosensitivity of Mg₂Si Photodiodes with a ring-mesh-electrode

〇Yudai Ichikawa¹, Takeru Miyauchi¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

3:45 PM - 4:00 PM

△ [16p-Z23-9] Effect of Zn_1-xGe_xO interlayer on n⁺-AZO/p-BaSi₂ heterojunction solar cells

〇Yudai Yamashita¹, Miho Kitamura², Koji Horiba², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.KEK)

4:00 PM - 4:15 PM

[16p-Z23-10] Photoresponse properties of β-FeSi₂ pn homojunction grown by MBE

〇Ryota Kinoshita¹, Kazuki Yamato¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Poster presentation

[16p-P11-1~1] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Mar 16, 2021 5:00 PM - 5:50 PM P11 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

5:00 PM - 5:50 PM

[16p-P11-1] Formation of copper iodide thin films using iodine solution prepared by various deposition conditions of copper nitride thin films

〇Yuduru Hata¹, Masao Isomura¹, Tetsuya Kaneko¹ (1.Toukai Univ.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-Z23-1] Investigation of the effect of substrate temperature on the characteristics of
BaSi₂ films on glass substrates formed by RF sputtering

[16a-Z23-2] Characterizations of B-doped BaSi₂ films formed by sputtering

[16a-Z23-3] High Refractive Index and Low Extinction Coefficient in Infrared Spectrum of Polycrystalline β-FeSi₂ Thin Film Prepared by Co-sputtering

[16a-Z23-4] Growth of β-Fe_1-xRu_xSi₂ polycrystalline thin films and their PL properties

[16a-Z23-5] Application of mechanochemical effects to close-spaced evaporation of BaSi₂

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi₂ films and its mechanisms by ab initio studies

[16a-Z23-7] Effect of post annealing on photoresponsivity of B-doped p-BaSi₂ films

[16a-Z23-8] Effect of in situ annealing on BaSi₂ evaporated films with low deposition rate

[16a-Z23-9] Evaluation of thermoelectric properties of B-doped BaSi₂ films grown by MBE

[16a-Z23-10] Phase relationship of Sr-Si system around Si concentration of 66.7 at. %

[16a-Z23-11] Bulk moduli and bulk thermal expansion coefficients of silicides

[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-Z23-1] Low temperature epitaxial growth of topological insulator Bi₂Se₃ and their electrical properties

▼ [16p-Z23-2] A New Synthesis Technique for type-II Ge Clathrate Film

▲ [16p-Z23-3] Synthesis of ternary type II clathrate films using AlGe alloy

[16p-Z23-4] CaGe₂ film growth by close-spaced evaporation and transformation to GeH

[16p-Z23-5] Hydrogen simulation in the pyrite-type sulfide semiconductor FeS₂

[16p-Z23-6] Optical dynamics prediction by first-principles simulation and AI based inverse design approach for core-shell colloidal quantum dot

[16p-Z23-7] Carrier lifetime and dark current of Mg₂Si pn-junction diode formed on Mg₂Si substrate by thermal diffusion

[16p-Z23-8] Relationship between Bias-voltage and Photosensitivity of Mg₂Si Photodiodes with a ring-mesh-electrode

△ [16p-Z23-9] Effect of Zn_1-xGe_xO interlayer on n⁺-AZO/p-BaSi₂ heterojunction solar cells

[16p-Z23-10] Photoresponse properties of β-FeSi₂ pn homojunction grown by MBE

[16p-P11-1~1] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-P11-1] Formation of copper iodide thin films using iodine solution prepared by various deposition conditions of copper nitride thin films

Authenticate

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-Z23-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi2 films and its mechanisms by ab initio studies

[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

▼ [16p-Z23-2] A New Synthesis Technique for type-II Ge Clathrate Film

▲ [16p-Z23-3] Synthesis of ternary type II clathrate films using AlGe alloy

△ [16p-Z23-9] Effect of Zn1-xGexO interlayer on n+-AZO/p-BaSi2 heterojunction solar cells

[16p-P11-1~1] 13.2 Exploratory Materials, Physical Properties, Devices

Authenticate

△ [16a-Z23-6] Photoresponsivity enhancement of H passivated As-doped n-BaSi₂ films and its mechanisms by ab initio studies

△ [16p-Z23-9] Effect of Zn_1-xGe_xO interlayer on n⁺-AZO/p-BaSi₂ heterojunction solar cells