[16p-Z23-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[16p-Z23-10] Photoresponse properties of β-FeSi₂ pn homojunction grown by MBE

〇Ryota Kinoshita¹, Kazuki Yamato¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Keywords:beta-FeSi2, pn homojunction, photodiode

We have attempted to control the p-type and n-type conduction in β-FeSi₂ by impurity doping. The hole density was controlled by Al doping, and high hole density(p⁺ ~ 10¹⁹ cm^-3) was obtained when the Al doping concentration was more than 1.4%.The electron density (n = 10¹⁷ ~ 10¹⁹ cm^-3) was also controlled by controlling the amount of Sb doping and the Si/Fe composition ratio during growth. In this study, we report the epitaxial growth of p⁺-β-FeSi₂/n⁺-β-FeSi₂ homojunctions on Si substrates and their current-voltage (I-V) and photoresponse characteristics.