[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-3] Experimental Demonstration of HfO₂-based Ferroelectric Transistor with MoS₂ Channel for High-Density and Low-Power Memory Application

〇(M2)Jiawen Xiang¹, Wenhsin Chang², Takuya Saraya¹, Toshifumi Irisawa², Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS,Univ. of Tokyo, 2.AIST)

Keywords:ferroelectric, non-volatile memory, MoS2

The 3D vertical structure FeFET with poly-Si channel reported in 2018 has problems such as low mobility, charge trap and voltage drop due to the low dielectric constant interface layer formed between the ferroelectric insulating film and the channel. Therefore, we proposed FeFET with ultra-thin MoS₂ channel and HfZrO₂, which is expected to form a good MOS interface without dangling bonds in interface formation, and can suppress the formation of low dielectric constant interface layer and charge trap. We design and fabricate the device and demonstrate its potential as a lower power, high density memory device.