[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-4] Trade-off Between Crystallization-Annealing Temperature and Si Interface Properties in HfO₂-based FeFETs

〇Kasidit Toprasertpong¹, Kento Tahara¹, Taichiro Fukui¹, Zaoyang Lin¹, Kouhei Watanabe¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:Ferroelectric-gate FET (FeFET), Annealing, Interface properties

HfO₂-based ferroelectric materials have been intensively investigated as gate insulators in FeFETs. It is known that an appropriate annealing process is important in stabilizing the ferroelectric phase in such ferroelectric materials. On the other hand, not only the ferroelectricity but also the interface properties with the semiconductor channel is critical to the FeFET device performance. In this study, we systematically investigate the impact of ferroelectric-phase crystalization annealing on the interface of Hr_0.5Zr_0.5O₂/Si FeFETs and discuss the guideline on the annealing process for the FeFET fabrication.