[16p-Z26-1~15] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

[16p-Z26-8] Changing of structural distortion and stabilization of ferroelectric phase in cap-annealed HfO₂ thin films characterized by in-plane and out-of-plane XRD

〇Haruki Momiyama¹, Siri Nittayakasetwat¹, Koji Kita¹ (1.Tokyo Univ.)

Keywords:HfO2, ferroelectric, capping

In ferroelectric HfO2 thin films, there is a large structural strain, which can be detected as the shift of XRD peaks in the in-plane and out-of-plane directions. By comparing the ferroelectric properties with the fatigue, the possibility of manipulating the ferroelectric properties by strain control was suggested.