Reduction of <em>J<sub>th</sub></em> in AlGaN-based UV-B LDs with high light confinement structure

Tomoya Omori; Syunya Tanaka; Yuya Ogino; Kazuki Yamada; Shohei Teramura; Kosuke Sato; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

Tue. Mar 16, 2021 1:00 PM - 5:15 PM Z27 (Z27)

Motoaki Iwaya(Meijo Univ.), Ryuji Katayama(Osaka Univ.), Tomoyuki Tanikawa(Osaka Univ.)

1:45 PM - 2:00 PM

△ [16p-Z27-4] Reduction of J_th in AlGaN-based UV-B LDs with high light confinement structure

〇(M1)Tomoya Omori¹, Syunya Tanaka¹, Yuya Ogino¹, Kazuki Yamada¹, Shohei Teramura¹, Kosuke Sato^1,2, Sho Iwayama^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4, Hideto Miyake³ (1.Meijo Univ., 2.Asahi-Kasei Corp., 3.Mie Univ., 4.Akasaki Research Center, Nagoya Univ.)

Keywords:semiconductor, UV-B, AlGaN

Presentation information

[16p-Z27-1~15] 15.4 III-V-group nitride crystals

△ [16p-Z27-4] Reduction of Jth in AlGaN-based UV-B LDs with high light confinement structure

△ [16p-Z27-4] Reduction of J_th in AlGaN-based UV-B LDs with high light confinement structure