[16p-Z27-1~15] 15.4 III-V-group nitride crystals

[16p-Z27-5] Low voltage operation of AlGaN homo tunnel junction deep UV LED

〇Kengo Nagata^1,2,3, Hiroaki Makino², Hiroshi Miwa^2,3, Shinichi Matsui^2,3, Shinya Boyama^2,3, Yoshiki Saito^2,3, Maki Kushimoto¹, Yoshio Honda⁴, Tetsuya Takeuchi⁵, Hiroshi Amano^4,6,7 (1.Dept. of Electronics Nagoya Univ., 2.Toyoda Gosei Co., Ltd., 3.TS Opto Co., Ltd., 4.IMaSS, Nagoya Univ., 5.Meijo Univ., 6.ARC, Nagoya Univ., 7.VBL, Nagoya Univ.)

Keywords:UV LED, Tunnel junction, AlGaN

We produced an AlGaN homo TJ DUV LED by suppressing the C concentration in the TJ part and performing high Si doping. The characteristics of the manufactured TJ LED were Po = 31.4 mW, Vf = 10.4 V at 63 A / cm², wavelength 283 nm, and the operating voltage was obtained lower than before. We considered the tunneling probability increases and contributes to low voltage operation owing to the depletion layer width reduction by doping high carrier concentration in top n-AlGaN and n⁺-AlGaN and the conduction through the defect levels.