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[16p-Z27-8] Discrete AlN Mole Fraction Observed in AlGaN Layer with Dense Macrosteps (3)
Keywords:AlGaN, DUV, LED
Electroluminescence (EL) spectra emitted from dies in wafers fabricated with our standard UVB and UVC LED recipes respectively have featured shoulder peak wavelengths at (283, 287, 292, and 297 nm) and (257, 262, 266, and 271 nm). The samples have AlbGa1-bN quantum wells (QWs) with target b values of ~0.35 and 0.45 on n-AlaGa1-aN (a~0.6 and 0.7), respectively, grown on a 1° miscut c(0001) sapphire with respect to m[1-100] axis. EL wavelengths of the AlGaN QWs were calculated to show that the peaks can be assigned to the emission from Al1/3Ga2/3N and Al1/2Ga1/2N with the thicknesses of n monolayer (ML) (n=7–10 and 5–7). The results suggest Al mole fractions in the QWs are likely to have specific values of n/12 (n=4 and 6) with 1-ML-structures stuck in the c[0001] direction.