[16p-Z33-1~14] 6.3 Oxide electronics

[16p-Z33-1] Growth and characterization of Fe₃O₄ thin films on hexagonal boron nitride

〇Shingo Genchi¹, Ai I. Osaka¹, Azusa N. Hattori¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)

Keywords:metal-insulator transition, hexagonal boron nitride, thin films growth

We grew Fe₃O₄ thin films, which exhibits metal-insulator transition around 110 K on hexagonal boron nitride by pulsed laser deposition method. We analyzed the crystallinity and the phase transition property by Raman spectroscopy and the electric measurement system. Fe₃O₄ on hBN showed clear Raman peaks at room temperature and around 3 orders of magnitude resistance change accompanied by the phase transition was observed by fabrication of microwires. This result suggests the utility of hBN as a growth substrate.