11:15 〜 11:30
▲ [17a-Z17-9] Thermoelectric properties of p-type Si-Ge-(Fe,Ni,V,Ti)-B alloys
キーワード：Si-Ge, ball milling, thermoelectric property
Our previous report showed that B-doped Si-Ge-Au thin film and bulk sample possessed ZT value of 1.38 and 1.63 at 1000K. We found that the electron transport properties were constructively improved using Au-doping to form an impurity states near the valence band top, and B-doping to control the Fermi level. Very small thermal conductivity ~ 1.5 Wm-1K-1 was obtained due to nanograins. However, since Au is an expensive element, that avoid us to move further device application. Therefore, we need to find other metals which cheap, non-toxic, and environmentally friendly.
Yamada et al., Calculated the DOS of Si-Ge by various transition metal doping [3]. It revealed that large Seebeck coefficient could be obtained by making sharp peak near valence or conduction band edge with different transition metal doping such as Mn, Ni, Co, Cu, Fe, and Zn.
These metals are cheap, non-toxic, and environmentally friendly. In this study, therefore, we synthesized bulk noncrystalline p-type Si-Ge alloy with a small amout of one of the 3d-transition metal elements together with boron. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.
Yamada et al., Calculated the DOS of Si-Ge by various transition metal doping [3]. It revealed that large Seebeck coefficient could be obtained by making sharp peak near valence or conduction band edge with different transition metal doping such as Mn, Ni, Co, Cu, Fe, and Zn.
These metals are cheap, non-toxic, and environmentally friendly. In this study, therefore, we synthesized bulk noncrystalline p-type Si-Ge alloy with a small amout of one of the 3d-transition metal elements together with boron. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.