Oral presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[17a-Z17-1~11] 9.4 Thermoelectric conversion

Wed. Mar 17, 2021 9:00 AM - 12:00 PM Z17 (Z17)

Koji Miyazaki(Kyushu Inst. of Tech.), Takafumi Ishibe(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [17a-Z17-1] Effect of various inorganic films on the growth of CsSnI₃ crystal towards thermoelectric
applications

〇Ajay Kumar Baranwal¹, Daisuke Hirotani¹, Shrikant Saini², Tomohide Yabuki², Qing Shen², Koji Miyazaki², Shuzi Hayase¹ (1.Univ. Electro-Comm., 2.Kyushu Inst. Techn.)

9:15 AM - 9:30 AM

▼ [17a-Z17-2] Thermoelectric Properties of Tungsten Oxide Films with 1D Atomic Defect Tunnels

〇(DC)GOWOON KIM¹, Bin Feng², Yu-Miin Sheu³, Sangkyun Ryu⁴, Hyoungjeen Jeen⁴, Yuichi Ikuhara², HaiJun Cho^1,5, Hiromichi Ohta^1,5 (1.IST-Hokkaido Univ., 2.Univ. Tokyo, 3.Natl Chia Tung Univ., 4.Pusan Natl Univ., 5.RIES-Hokkaido Univ.)

9:30 AM - 9:45 AM

▲ [17a-Z17-3] Effect of deformation and annealing effect on Thermoelectric Properties of flexible Ag₂S_1-xSe_x (0 < x < 0.55) Material for Energy Applications

〇(PC)Saurabh Singh^1,2, Keisuke Hirata¹, Omprakash Muthusamy¹, Gareoung Kim^1,3, Ying Peng¹, Masahiro Ryu¹, Dogyun Byeon¹, Masaharu Matsunami¹, Tsunehiro Takeuchi^1,2,3 (1.Research Center for Smart Energy Technology, Toyota Technological Institute, Nagoya 468-8511, Japan., 2.CREST, Japan Science and Technology Agency, Tokyo 102-0076, Japan., 3.MIRAI, Japan Science and Technology Agency, Tokyo 102-0076, Japan)

9:45 AM - 10:00 AM

▲ [17a-Z17-4] High Power Factor in Mg₂Sn_1-xGa_x Epitaxial Thin Films

〇(D)Mariana Lima^1,2, T. Aizawa², I. Ohkubo², T. Sakurai¹, T. Mori^1,2 (1.Univ. Tsukuba, 2.NIMS)

10:00 AM - 10:15 AM

[17a-Z17-5] Formation and characterization of thermoelectric full-Heusler Fe₂TiAl alloy thin films using rapid thermal alloying process

〇Hajime Hiroki¹, Yota Takamura¹, Eisuke Matsusita¹, Satoshi Sugahara², Shigeki Nakagawa¹ (1.Dept. of Elect. Elec. Eng., Tokyo Tech, 2.FIRST, Tokyo Tech)

10:30 AM - 10:45 AM

[17a-Z17-6] Thermoelectric properties of strain- and composition-controlled epitaxial SiGe thin films

〇Tatsuhiko Taniguchi¹, Takafumi Ishibe¹, Youya Wagatsuma², Kentarou Sawano², Yuichiro Yamashita³, Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Tokyo City Univ., 3.AIST)

10:45 AM - 11:00 AM

[17a-Z17-7] Electron transport mechanism in e-CoSi film/Si for high thermoelectric power factor

〇Takafumi Ishibe¹, Yuto Uematsu¹, Ryosuke Takenaka², Katsuhiro Suzuki², Kazunori Sato², Takeshi Fujita³, Eiichi Kobayashi⁴, Yoshiaki Nakamura¹ (1.Grad. School of Eng. Sci., 2.Grad. School of Eng., 3.Kochi Univ. of Technol., 4.Kyushu Synchrotron Light Research Center)

11:00 AM - 11:15 AM

[17a-Z17-8] Development high-performance, p-type, Si-Ge-based thermoelectric materials

〇(B)Yuki Ohta¹, Iori Masaoka², Omprakash Muthusamy², Naoto Kubo², Masahiro Tahashi¹, Hideo Goto¹, Tsunehiro Takeuchi², Masaharu Matsunami² (1.Chubu Univ., 2.Toyota Tech Inst.)

11:15 AM - 11:30 AM

▲ [17a-Z17-9] Thermoelectric properties of p-type Si-Ge-(Fe,Ni,V,Ti)-B alloys

〇(PC)Omprakash Muthusamy¹, Saurabh Singh^1,3, Masahiro Adachi², Yoshiyuki Yamamoto², Tsunehiro Takeuchi^1,3,4,5 (1.Toyota Technological Institute, 2.Sumitomo Elec. Ind. Ltd.,, 3.CREST, 4.MIRAI, 5.Nagoya University)

11:30 AM - 11:45 AM

[17a-Z17-10] Characterization of Ca₃Co₄O₉ oxide thermoelectric material synthesized from acetate gel

〇Daiki Kojima¹, Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹, Tsunehiro Takeuchi² (1.Chubu Univ., 2.Toyota Tech. Inst.)

11:45 AM - 12:00 PM

[17a-Z17-11] Characterization of CaMnO₃ oxide thermoelectric material synthesized from acetate gel

〇Hiroya Nishihara¹, Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹, Tsunehiro Takeuchi² (1.Chubu Univ., 2.Toyota Tech. Inst.)

Session information

[17a-Z17-1~11] 9.4 Thermoelectric conversion

▲ [17a-Z17-1] Effect of various inorganic films on the growth of CsSnI₃ crystal towards thermoelectric
applications

▼ [17a-Z17-2] Thermoelectric Properties of Tungsten Oxide Films with 1D Atomic Defect Tunnels

▲ [17a-Z17-3] Effect of deformation and annealing effect on Thermoelectric Properties of flexible Ag₂S_1-xSe_x (0 < x < 0.55) Material for Energy Applications

▲ [17a-Z17-4] High Power Factor in Mg₂Sn_1-xGa_x Epitaxial Thin Films

[17a-Z17-5] Formation and characterization of thermoelectric full-Heusler Fe₂TiAl alloy thin films using rapid thermal alloying process

[17a-Z17-6] Thermoelectric properties of strain- and composition-controlled epitaxial SiGe thin films

[17a-Z17-7] Electron transport mechanism in e-CoSi film/Si for high thermoelectric power factor

[17a-Z17-8] Development high-performance, p-type, Si-Ge-based thermoelectric materials

▲ [17a-Z17-9] Thermoelectric properties of p-type Si-Ge-(Fe,Ni,V,Ti)-B alloys

[17a-Z17-10] Characterization of Ca₃Co₄O₉ oxide thermoelectric material synthesized from acetate gel

[17a-Z17-11] Characterization of CaMnO₃ oxide thermoelectric material synthesized from acetate gel

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Session information

[17a-Z17-1~11] 9.4 Thermoelectric conversion

▲ [17a-Z17-1] Effect of various inorganic films on the growth of CsSnI3 crystal towards thermoelectricapplications

▼ [17a-Z17-2] Thermoelectric Properties of Tungsten Oxide Films with 1D Atomic Defect Tunnels

▲ [17a-Z17-3] Effect of deformation and annealing effect on Thermoelectric Properties of flexible Ag2S1-xSex (0 < x < 0.55) Material for Energy Applications

▲ [17a-Z17-4] High Power Factor in Mg2Sn1-xGax Epitaxial Thin Films

[17a-Z17-5] Formation and characterization of thermoelectric full-Heusler Fe2TiAl alloy thin films using rapid thermal alloying process

[17a-Z17-6] Thermoelectric properties of strain- and composition-controlled epitaxial SiGe thin films

[17a-Z17-7] Electron transport mechanism in e-CoSi film/Si for high thermoelectric power factor

[17a-Z17-8] Development high-performance, p-type, Si-Ge-based thermoelectric materials

▲ [17a-Z17-9] Thermoelectric properties of p-type Si-Ge-(Fe,Ni,V,Ti)-B alloys

[17a-Z17-10] Characterization of Ca3Co4O9 oxide thermoelectric material synthesized from acetate gel

[17a-Z17-11] Characterization of CaMnO3 oxide thermoelectric material synthesized from acetate gel

Authenticate

▲ [17a-Z17-1] Effect of various inorganic films on the growth of CsSnI₃ crystal towards thermoelectric
applications

▲ [17a-Z17-3] Effect of deformation and annealing effect on Thermoelectric Properties of flexible Ag₂S_1-xSe_x (0 < x < 0.55) Material for Energy Applications

▲ [17a-Z17-4] High Power Factor in Mg₂Sn_1-xGa_x Epitaxial Thin Films

[17a-Z17-5] Formation and characterization of thermoelectric full-Heusler Fe₂TiAl alloy thin films using rapid thermal alloying process

[17a-Z17-10] Characterization of Ca₃Co₄O₉ oxide thermoelectric material synthesized from acetate gel

[17a-Z17-11] Characterization of CaMnO₃ oxide thermoelectric material synthesized from acetate gel