[17a-Z27-1~9] 15.4 III-V-group nitride crystals

[17a-Z27-1] High quality semipolar (10-13) AlN hetero-epitaxial growth by ammonia-free high-temperature MOVPE (AFHT-MOVPE)

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:AlN, Semipolar

We used ammonia-free high-temperature MOVPE (AFHT-MOVPE) method to grow semipolar AlN epilayers on m-face sapphire substrates. As a result, we succeeded in growning twin-free, high-quality single phase (10-13) semipolar AlN films on m-sapphire substrates by this growth technique.