[17a-Z27-1~9] 15.4 III-V-group nitride crystals

△ [17a-Z27-2] InGaN growth on SCAMO substrate via Tri-Halide Vapor Phase Epitaxy

〇Iori Kobayashi¹, Kentaro Ema¹, Ryohei Hieda¹, Hisashi Murakami¹, Akinori Koukitu¹ (1.Tokyo Univ. of Agriculture and Tech.)

Keywords:III-V nitride semiconductors, indium gallium nitride

Low quality in growing high In composition InGaN crystal due to the lattice mismatch between the substrate and the epitaxial layer has been one of the biggest problems in this field. In order to solve this problem, we used a material called ScAlMgO₄ (SCAMO) as the substrate to grow a high In composition InGaN in a lattice matched system. Additionally, we used Tri-Halide Vapor Phase Epitaxy as the growing method, which has indicated the possibility of growing a high quality InGaN with a high growth rate.