[17a-Z27-1~9] 15.4 III-V-group nitride crystals

△ [17a-Z27-3] Electrical and structural properties of p-type GaN layers fabricated by HVPE

〇(D)Kazuki Ohnishi¹, Yuki Amano¹, Naoki Fujimoto², Shugo Nitta², Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

Keywords:HVPE, p-type GaN

HVPE, which is commonly used for fabricating GaN free-standing substrates, is also a promising method for fabricating vertical GaN devices. Previously, we reported the fabrication of p-type GaN layers by HVPE. In this study, Electrical and structural properties of p-type GaN layers with Mg concentrations of 8.0E18 - 8.3E19 cm^-3 were investigated by using the Hall-effect measurements and the HAADF-STEM observations, respectively.