9:30 AM - 9:45 AM
△ [17a-Z27-3] Electrical and structural properties of p-type GaN layers fabricated by HVPE
Keywords:HVPE, p-type GaN
HVPE, which is commonly used for fabricating GaN free-standing substrates, is also a promising method for fabricating vertical GaN devices. Previously, we reported the fabrication of p-type GaN layers by HVPE. In this study, Electrical and structural properties of p-type GaN layers with Mg concentrations of 8.0E18 - 8.3E19 cm-3 were investigated by using the Hall-effect measurements and the HAADF-STEM observations, respectively.