[17a-Z32-1~7] 15.1 Bulk crystal growth

[17a-Z32-6] Growth conditions and defects of ScAlMgO₄ single crystal.

〇Yuji Shiraishi¹, Toki Nanto¹, Tsuguo Fukuda¹, Takashi Fujii^1,2, Kazumasa Sugiyama³, Kotaro Ishiji⁴, Katsuhiko Inaba⁵ (1.Fukuda Crystal Lab., 2.Ritsumeikan Univ., 3.IMR, Tohoku Univ., 4.Kyushu Synchrotron Light Research Center., 5.Rigaku Corp.)

Keywords:ScAlMgO4, crystal growth, CZ method

Regarding ScAlMgO4 single crystal, 3 ″ φ crystal growth, 2 ″ φ dislocation-free crystal, and crystal characteristics have been reported. GaN LEDs, InGaN LEDs, and GaN free-standing substrates using ScAlMgO4 substrates have also been announced, and are attracting attention in the fields of micro LEDs, LDs, and power devices. Here, we will present the crystal defects that occur during the growth of ScAlMgO4 single crystals.