The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[17a-Z32-1~7] 15.1 Bulk crystal growth

Wed. Mar 17, 2021 9:30 AM - 11:30 AM Z32 (Z32)

Yuui Yokota(Tohoku Univ.), Hiraku Ogino(AIST)

11:15 AM - 11:30 AM

[17a-Z32-7] ScAlMgO4 single crystal wafer processing

Yuji Shiraishi1, Tsuyoshi Kumagai1, Toki Nanto1, Shinichi Seiryu2, 〇Tsuguo Fukuda1 (1.Fukuda Crystal Lab, 2.OTASJAPAN)

Keywords:ScAlMgO4, Crystal growth

It was reported that the ScAlMgO4 single crystal not only has a small lattice constant mismatch with GaN, but also can grow dislocation-free crystals, can spontaneously peel off from the GaN grown thin film, and reuse the seed substrate by cleaving ScAlMgO4. Last year, a high-quality free standing substrate of 2 ”φ was reported, and interest for power devices is increasing. I will talk about the cleavage processing and processing technology for epitaxial growth substrates of ScAlMgO4.