[17p-Z12-1~12] Progress and future prospects of graphene research~10 years since receiving the Nobel Prize in Physics~

▲ [17p-Z12-8] Growth of hexagonal boron nitride/graphene bilayer heterostructure via epitaxial intercalation

〇SHENGNAN WANG¹, Jack Crowther¹, Hiroyuki Kageshima², Hiroki Hibino^1,3, Yoshitaka Taniyasu¹ (1.NTT Basic Research Labs, 2.Shimane Univ., 3.Kwansei Gakuin Univ.)

Keywords:graphene, hBN, heterostructure

Moiré engineering has emerged as an attractive technology to tailor the physical properties of stacked van der Waals (vdW) materials where quantum control can take place. To extend the diversity of fundamental research and make progress towards practical applications, the development of a reliable and high-throughput synthesis approach for such stacked layers with desired interlayer angles is indispensable.
We previously reported the chemical vapor deposition (CVD) growth of uniform hexagonal boron nitride (hBN) film with high quality. Here, we first grow the hBN as a top layer template, then epitaxially grow graphene underneath the hBN template, thereby achieving the growth of hBN/graphene bilayer heterostructures. The epitaxial intercalation of graphene under the hBN leads to convergent interlayer angles of less than 0.5o.