16:30 〜 16:45
▲ [17p-Z12-8] Growth of hexagonal boron nitride/graphene bilayer heterostructure via epitaxial intercalation
キーワード：graphene, hBN, heterostructure
Moiré engineering has emerged as an attractive technology to tailor the physical properties of stacked van der Waals (vdW) materials where quantum control can take place. To extend the diversity of fundamental research and make progress towards practical applications, the development of a reliable and high-throughput synthesis approach for such stacked layers with desired interlayer angles is indispensable.
We previously reported the chemical vapor deposition (CVD) growth of uniform hexagonal boron nitride (hBN) film with high quality. Here, we first grow the hBN as a top layer template, then epitaxially grow graphene underneath the hBN template, thereby achieving the growth of hBN/graphene bilayer heterostructures. The epitaxial intercalation of graphene under the hBN leads to convergent interlayer angles of less than 0.5o.
We previously reported the chemical vapor deposition (CVD) growth of uniform hexagonal boron nitride (hBN) film with high quality. Here, we first grow the hBN as a top layer template, then epitaxially grow graphene underneath the hBN template, thereby achieving the growth of hBN/graphene bilayer heterostructures. The epitaxial intercalation of graphene under the hBN leads to convergent interlayer angles of less than 0.5o.