The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[17p-Z19-1~7] 10.2 Fundamental and exploratory device technologies for spin

Wed. Mar 17, 2021 1:15 PM - 3:00 PM Z19 (Z19)

Makoto Kohda(Tohoku Univ.)

2:00 PM - 2:15 PM

[17p-Z19-4] Ionic-gate tuning of spin-torque ferromagnetic resonance in nanometer-thick platinum

Ryo Ohshima1, Yuto Kohsaka1, Yuichiro Ando1, Teruya Shinjo1, Masashi Shiraishi1 (1.Kyoto Univ.)

Keywords:spin torque ferromagnetic resonance, spin Hall effect, ionic gating

Platinum (Pt) possesses large spin-orbit interaction (SOI) and is often selected as a material to study the spin-charge conversion, namely the spin Hall effect (SHE) and its inverse effect (ISHE). A previous study showed that the ionic-gate tuning of the resistance and the ISHE in Pt, and these effects were prominent when the thickness of Pt was thinner than 3 nm. Given that the SHE and the ISHE are interconnected by Onsager reciprocity, detection of the reciprocal effect of the gate-tunable ISHE in a nanometer-thick Pt, i.e., a gate-tunable SHE, can be expected. Here, we demonstrate an ion-gate tuning of the spin-torque ferromagnetic resonance (STFMR) by using a Pt/NiFe (Py) bilayer film.