[17p-Z27-1~14] 15.4 III-V-group nitride crystals

△ [17p-Z27-8] Enhanced radiative transition rate of Eu ions doped in GaN modulated by radiation fields in two-dimensional photonic crystal nanocavities

〇Takenori Iwaya¹, Masato Murakami¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:GaN:Eu, photonic crystal nanocavity, Purcell effect

We have previously realized high-brightness GaN-based red light emitting diodes using Eu-doped GaN (GaN:Eu) as an active layers. However, to realize brighter light emitting devices, the small radiative transition probability originating from 4f intra-atomic transition of Eu ions is a problem. In this report, we introduced two-dimensional photonic crystal nanocavities into GaN:Eu in order to modulate the radiation fields around Eu ions. As a result, we succeeded in enhancing the radiative transition probabilities of Eu ions.