[17p-Z27-1~14] 15.4 III-V-group nitride crystals

△ [17p-Z27-9] Enhanced red emission of semipolar (20-21) Eu-doped GaN with narrow line-width

〇Atsushi Takeo¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:rare-earth, semi-polar, luminescence

We have previously realized high-brightness GaN-based red light emitting diodes using Eu-doped GaN (GaN:Eu) as an active layers.It has been clarified that the O impurities around Eu in the form highly efficient light emitting sites, but in the conventional (0001) GaN, multiple types of Eu centers lacking O impurities remain. In this study, we report the sharpening of the emission spectrum and the increase of emission intensity by crystal growth of a GaN:Eu film on a semi-polar (20-21) GaN template.