[17p-Z28-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [17p-Z28-3] Influence of crystal growth temperature on surface morphology and carrier lifetime of InGaP

〇Meita Asami¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo, 2.RCAST)

Keywords:InGaP, solar cell, InGaP/GaAs hetero-junction

Our study proposes new crystal growth technique for growing high-crystal-quality GaAs on long-carrier-lifetime InGaP. This technique can be applied to InGaP/GaAs heterostructure solar cells. We need to grow InGaP at high temperature to make carrier lifetime in InGaP long; however, InGaP grown at high temperature has rough surface morphology which hinders growing high-crystal-quality GaAs on InGaP. We revealed that we can grow high-crystal-quality GaAs on long-carrier lifetime InGaP by growing 10 nm of low-temperature-grown InGaP between GaAs and high-temperature-grown InGaP.